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| IXGH 32N60A IXGH 32N60AS VCES IC25 VCE(sat) tfi = = = = 600 V 60 A 2.9 V 125 ns HiPerFASTTM IGBT TO-247 SMD (32N60AS) Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (M3) Test Conditions TJ = 25C to 150C TJ = 25C to 150C; R GE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 33 Clamped inductive load, L = 100 H TC = 25C Maximum Ratings 600 600 20 30 60 32 120 ICM = 64 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 300 V V V V A A A A W C C C C Features q International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD q High current handling capability q 2nd generation HDMOSTM process q MOS Gate turn-on - drive simplicity Applications AC motor speed control q DC servo and robot drives q DC choppers q Uninterruptible power supplies (UPS) q Switched-mode and resonant-mode power supplies q G E C (TAB) TO-247 AD C (TAB) G C E C = Collector TAB = Collector G = Gate E = Emitter 1.13/10 Nm/lb.in. TO-247 AD TO-247 SMD 6 4 g g Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25C TJ = 125C V V A mA nA V BV CES V GE(th) I CES I GES V CE(sat) IC IC = 250 A, VGE = 0 V = 250 A, VCE = VGE 5 200 1 100 2.9 VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V Advantages Space savings (two devices in one package) q High power density q Suitable for surface mounting q Switching speed for high frequency applications q Easy to mount with 1 screw,TO-247 (isolated mounting screw hole) q (c)1995 IXYS Corporation. All rights reserved. 92793H (3/96) IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15,D-68623 Lampertheim Phone: +49-6206-503-0 Fax: +49-6206-503627 IXGH 32N60A IXGH 32N60AS TO-247 AD Outline Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 15 20 2500 VCE = 25 V, VGE = 0 V, f = 1 MHz 230 70 125 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100 H, VCE = 0.8 VCES, RG = Roff = 4.7 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 23 50 25 30 120 125 1.8 25 35 1 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES , higher TJ or increased RG 140 260 4.0 200 175 150 35 75 S pF pF pF e P gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK IC = IC90 ; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 % nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-247 SMD Outline 0.62 K/W 0.25 K/W IXGH 32N60A and IXGH 32N60AS characteristic curves are located in the IXGH 32N60AU1 data sheet. Min. Recommended Footprint (Dimensions in inches and mm) 1. Gate 2. Collector 3. Emitter 4. Collector Dim. A A1 A2 b b1 C D E e L L1 L2 L3 L4 OP Q R S Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 0.61 0.80 20.80 21.34 15.75 5.45 4.90 2.70 2.10 0.00 1.90 3.55 5.59 4.32 6.15 16.13 BSC 5.10 2.90 2.30 0.10 2.10 3.65 6.20 4.83 BSC Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .024 .031 .819 .840 .620 .215 .193 .106 .083 .00 .075 .140 .220 .170 .242 .635 BSC .201 .114 .091 .004 .083 .144 .244 .190 BSC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15,D-68623 Lampertheim Phone: +49-6206-503-0 Fax: +49-6206-503627 |
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